Abstract：The optical emission process of atomic hydrogen (Hα, Hβ, Hγ), atomic carbon C(2p3s2p2∶λ=165.7 nm) and radical CH(A2Δ→X2Π∶λ=420-440 nm) in diamond film growth by electron-assisted chemical vapor deposition (EACVD) from a gas mixture of CH4 and H2 was studied by using Monte-Carlo simulation. The variation of the emission lines with gas pressure (0.1-12.5 kPa) of different substrate temperatures (573-1 173 K) was investigated. And the results show that at different substrate temperatures the intensity of all the emission lines increase with increasing gas pressure at first, whereas decreased afterward. Furthermore, the emission lines intensity decreases with increasing substrate temperature at a relative low gas pressure, while increases with increasing substrate temperature at the higher gas pressure.
Key words：Electron-assisted chemical vapor deposition;Diamond;Monte-Carlo simulation;Optical emission spectrum
王志军，董丽芳，李盼来，尚勇. 电子助进化学气相沉积金刚石中的光发射谱特性[J]. 光谱学与光谱分析, 2008, 28(04): 763-765.
WANG Zhi-jun,DONG Li-fang,LI Pan-lai,SHANG Yong. Characteristic of Optical Emission Spectrum in Electron-Assisted Chemical Vapor Deposition of Diamond. SPECTROSCOPY AND SPECTRAL ANALYSIS, 2008, 28(04): 763-765.
